Nb2O5-doped NiZnCo ferrite ceramics with ultra-high magnetic quality factor and low coercivity for high-frequency electronic devices

This work investigates the influence of niobium pentoxide (Nb₂O₅) as dopant, on the structural, magnetic, and dielectric properties of NiZnCo ferrites. The results showed that Nb₂O₅ was an effective dopant, and the Nb⁵⁺ ions entered the B site to replace Fe³⁺ ions, which altered the electromagnetic properties of the NiZnCo ferrite. In particular, the coercivity (H_c) was 20～24 Oe, and the magnetic quality factor (Q), was more than 200 at x = 0 and x = 0.1 wt%, which is 4～5 times higher than that of NiZn and NiCuZn ferrites. Excellent electromagnetic properties were obtained for 0.1 wt% Nb₂O₅-doped NiZnCo ferrite, i.e., M_s = 88.3 emu/g, H_c =20.4 Oe, ρ = 2.4 × 10⁵ Ω m and Q = 202 @20 MHz. These excellent electromagnetic properties of Nb₂O₅-doped NiZnCo ferrites could be potentially applied to resonators and capacitors at high frequency.     

Stable Radicals with Protective Umbrellas Integrated on the Surface of 2D Layered Materials

Radicals are closely related to human life and health and have been widely used in biology, chemistry, functional materials, etc. However, the high reactivity, disorder, and short half-lives limit their wide applications. Therefore, it remains a great challenge to prepare stable and ordered radicals. Herein, radicals are prepared with protective umbrellas (diethylmethyleneamine, DEMA) that are integrated on the surface of 2D layered materials to isolate water and oxygen and enhance the stability of radicals. Taking 2D black phosphorus (BP) as an example: triethylamine reacts with dichloromethane to form quaternary ammonium salts with further Hoffmann elimination to produce DEMA radicals that could react with one electron of a lone pair electrons in P on the surface of BP to produce P radicals, which shows a prolonged half-life of 21 days at room temperature. First-principle calculations and electron paramagnetic resonance fitting confirm that the steric hindrance constructed by dense DEMA passivation layer acts as a protective umbrella and the 2D coupling of P radicals and other P atoms in 2D BP plane to enhance the stability and strong superexchange interaction of P radicals. Furthermore, it is a general strategy to produce stable radicals integrated on the 2D plane.     

Dynamic hierarchical collaborative caching scheme in ultra-dense networks

Pushing popular contents to the edge of the network can meet the growing demand for data traffic, reduce latency and relieve the pressure of the backhaul. However, considering the limited storage space of the base stations, it is impossible to cache all the contents, especially in ultra-dense network ( UDN). Furthermore, the uneven distribution of mobile users results in load imbalance among small base stations (SBSs) in both time and space, which also affects the caching strategy. To overcome these shortcoming, the impact of the changing load imbalance in UDN was investigated, and then a dynamic hierarchical collaborative caching (DHCC) scheme was proposed to optimize latency and caching hit rate. The storage of the SBS is logically divided into the independent caching layer and the collaborative caching layer. The independent caching layer caches the most popular contents for local users爷interest, and the collaborative caching layer caches contents as much as possible for the benefit of content diversity in the region. Different SBSs have respective storage space layer division ratios, according to their real-time traffic load. For SBSs with heavy load, the independent caching layers are allocated with more space. Otherwise, the collaborative caching layers could store more contents with larger space. The simulation results show that, DHCC improved both transmission latency and hit rate compared with existing caching schemes.     

Dense and core-rim structured B4C-TiB2 ceramics with Mo-Co-WC additive

B₄C-TiB₂ ceramics (TiB₂ ranging 5~70 vol%) with Mo-Co-WC as the sintering additive were prepared by spark plasma sintering. In comparison with B₄C-TiB₂ without additive, the enhanced densification was evident in the sintered specimen with Mo-Co-WC additive. Core-rim structured grain was observed around TiB₂ grains. The interface of the rim between TiB₂ and B₄C phases demonstrated different feature: the inner borderline of the rim exhibited a smooth feature, whereas a sharp curved grain boundary was observed between the rim and the B₄C grain. The formation mechanism is discussed: the epitaxial growth of (Ti,Mo,W)B₂ rim around the TiB₂ core may occur as a result of the solid solution and dissolution-precipitation between TiB₂ phase and the sintering additive. It was revealed that the fracture toughness increased as the content of TiB₂ content increased, alongside the decreased hardness. B₄C-30 vol% TiB₂ specimen demonstrated the optimal combination of mechanical properties, reaching Vickers hardness of 24.3 GPa and fracture toughness of 3.33 MPa·m^1/2.     

Good dielectric performance and broadband dielectric polarization in Ag,Nb co-doped TiO2

Due to the demand of miniaturization and integration for ceramic capacitors in electronic components market, TiO₂-based ceramics with colossal permittivity has become a research hotspot in recent years. In this work, we report that Ag⁺/Nb⁵⁺ co-doped (Ag_1/4Nb_3/4)_xTi_1−xO₂ (ANTOx) ceramics with colossal permittivity over a wide frequency and temperature range were successfully prepared by a traditional solid–state method. Notably, compositions of ANTO0.005 and ANTO0.01 respectively exhibit both low dielectric loss (0.040 and 0.050 at 1 kHz), high dielectric permittivity (9.2 × 10³ and 1.6 × 10⁴ at 1 kHz), and good thermal stability, which satisfy the requirements for the temperature range of application of X9R and X8R ceramic capacitors, respectively. The origin of the dielectric behavior was attributed to five dielectric relaxation phenomena, i.e., localized carriers' hopping, electron–pinned defect–dipoles, interfacial polarization, and oxygen vacancies ionization and diffusion, as suggested by dielectric temperature spectra and valence state analysis via XPS; wherein, electron-pinned defect–dipoles and internal barrier layer capacitance are believed to be the main causes for the giant dielectric permittivity in ANTOx ceramics.     

Negative thermal quenching CsPbBr3 glass-ceramic based on intrinsic radiation and vacancy defect co-induced dual-emission

Halide perovskite glass-ceramic has recently moved into the center of the attention of perovskite research due to their potential for temperature sensing. However, quantum dots glass-ceramic with excellent luminescence performance still needs to be combined with rare-earth (RE) ions to accurately measure temperature. In this work, a novel non-RE doped dual-emission (460 nm and 512 nm) CsPbBr₃ quantum dots was obtained in telluride glass via the friction crystallization method, where 512 nm was derived from intrinsic luminescence of quantum dots, and 460 nm was originated from thermally induced bromine vacancy, which can be used for temperature sensing. Fluorescence intensity ratio results indicate that the relative sensitivity of dual-emission could reach 5.6 % K^?1 at 323 K. The discovery of non-RE doped CsPbBr₃ QDs glass-ceramic with negative thermal quenching uncovers a new optional sensing glass material that surpass traditional RE-doped QDs glass by their tunability and sensitivity.     

无黏土相盐水储层钻开液体系构建及其抗污染性能评价

采用NaCl/KCl/HCOONa复配欠饱和盐水作为钻开液的基础液相,自研的聚合物VIS-B作为流型调节剂,可酸溶的改性淀粉STA作为体系的降失水剂,Dua及Jqw作为暂堵材料,构建了一套无黏土相钻开液体系。该体系在密度1.10~1.28 g/cm^3间稳定可调,抗温可达130℃,具有较高的低剪切速率黏度和较好的润滑性能,且能有效抵抗各类储层污染物的污染,满足了Missan油田不同储层段的作业需求。     

Three distinct optical-switching states in phase-change materials containing impurities:From physical origin to material design

Ge2Sb2Tes is the most widely utilized chalcogenide phase-change material for non-volatile photonic applications,which undergoes amorphous-cubic and cubic-hexagonal phase transition under external excitations.However,the cubic-hexagonal optical contrast is negligible,only the amorphous-cubic phase transition of Ge2Sb2Te5 is available.This limits the optical switching states of traditional active dis-plays and absorbers to two.We find that increasing structural disorder difference of cubic-hexagonal can increase optical contrast close to the level of amorphous-cubic.Therefore,an amorphous-cubic-hexagonal phase transition with high optical contrast is realized.Using this phase transition,we have developed display and absorber with three distinct switching states,improving the switching perfor-mance by 50％.Through the combination of first-principle calculations and experiments,we reveal that the key to increasing structural disorder difference of amorphous,cubic and hexagonal phases is to intro-duce small interstitial impurities(like N)in Ge2Sb2Tes,rather than large substitutional impurities(like Ag)previously thought.This is explained by the formation energy and lattice distortion.Based on the impurity atomic radius,interstitial site radius and formation energy,C and B are also potential suit-able impurities.In addition,introducing interstitial impurities into phase-change materials with van der Waals gaps in stable phase such as GeSb4Te7,GeSb2Te4,Ge3Sb2Te6,Sb2Te3 will produce high optical con-trast amorphous-metastable-stable phase transition.This research not only reveals the important role of interstitial impurities in increasing the optical contrast between metastable-stable phases,but also proposes varieties of candidate matrices and impurities.This provides new phase-change materials and design methods for non-volatile optical devices with multi-switching states.     

High-Throughput Screening for Phase-Change Memory Materials

Phase change memory (PCM) is an emerging non-volatile data storage technology concerned by the semiconductor industry. To improve the performances, previous efforts have mainly focused on partially replacing or doping elements in the flagship Ge-Sb-Te (GST) alloy based on experimental “trial-and-error” methods. Here, the current largest scale PCM materials searching is reported, starting with 124 515 candidate materials, using a rational high-throughput screening strategy consisting of criteria related to PCM characteristics. In the results, there are 158 candidates screened for PCM materials, of which ≈68% are not employed. By further analyses, including cohesive energy, bond angle analyses, and Born effective charge, there are 52 materials with properties similar to the GST system, including Ge₂Bi₂Te₅, GeAs₄Te₇, GeAs₂Te₄, so on and other candidates that have not been reported, such as TlBiTe₂, TlSbTe₂, CdPb₃Se₄, etc. Compared with GST, materials with close cohesive energy include AgBiTe₂, TlSbTe₂, As₂Te₃, TlBiTe₂, etc., indicating possible low power consumption. Through further melt-quenching molecular dynamic calculation and structural/electronic analyses, Ge₂Bi₂Te₅, CdPb₃Se₄, MnBi₂Te₄, and TlBiTe₂ are found suitable for optical/electrical PCM applications, which further verifies the effectiveness of this strategy. The present study will accelerate the exploration and development of advanced PCM materials for current and future big-data applications.